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Same model may have multiple batches, images only for reference.
IXSN35N100U1 Real Image
Same model may have multiple batches, images only for reference.

IXSN35N100U1

Part No IXSN35N100U1
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT 64A 1000V SOT-227B
Datasheet
IXSN35N100U1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Status Obsolete(EOL)
Configuration Single
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 38A
Maximum Power Dissipation 205W
Collector-emitter saturation voltage(Max) 3.5V @ 15V, 25A
Collector Cut-off Current(Max) 750μA
Input Capacitance (Cies) @ Vce 4.5nF @ 25V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package SOT-227B
Win Source Part Number 205698-IXSN35N100U1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXSN35N100U1 CAD Model

Description

The IXYS IXSN35N100U1 is an obsolete (EOL) discrete semiconductor product that is a single configuration IGBT.

  • Maximum Collector Current: 38A
  • Collector-Emitter Breakdown Voltage: 1000V
  • Collector Cut-Off Current: 750μA
  • Maximum Power Dissipation: 205W
  • Temperature Range: -40°C to 150°C
  • Package: SOT-227B case
  • Popularity: Medium
  • Supply and Demand Status: Limited

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20+ $6.0765 $121.5300
30+ $5.8870 $176.6100
41+ $5.6965 $233.5565
53+ $5.5070 $291.8710
71+ $4.9376 $350.5696
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Availability: 7,800 pieces
MOQ: 8 pcs
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