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Same model may have multiple batches, images only for reference.
IXSH45N100 Real Image
Same model may have multiple batches, images only for reference.

IXSH45N100

Part No IXSH45N100
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1000V 75A 300W TO247
Datasheet
IXSH45N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 75A
Pulsed Collector Current 180A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 45A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 15mJ (off)
Input Type Standard
Gate Charge 165nC
Turn-on and Turn-off delay time 80ns/400ns
Testing Conditions 800V, 45A, 2.7 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049708-IXSH45N100
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH45N100 CAD Model

Description

The IXSH45N100 is a high power IGBT transistor manufactured by IXYS.

  • Mounting type: through-hole mounting type transistor
  • Maximum collector current: 75A
  • Collector-emitter breakdown voltage: 1000V
  • Maximum power dissipation: 300W
  • Pulsed collector current: 180A
  • Total switching energy: 15mJ (off)
  • Turn-on and turn-off delay time: 80ns/400ns
  • Operating temperature range: -55°C to 150°C (TJ).
  • Categorized under: Discrete Semiconductor Products
  • Status: currently obsolete(EOL).
  • Supply and demand status: of this transistor is sufficient.

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