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Same model may have multiple batches, images only for reference.
IXSH30N60BD1 Real Image
Same model may have multiple batches, images only for reference.

IXSH30N60BD1

Part No IXSH30N60BD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 55A 200W TO247
Datasheet
IXSH30N60BD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 55A
Pulsed Collector Current 110A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 55A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 1.5mJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 30ns/150ns
Testing Conditions 480V, 30A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049701-IXSH30N60BD1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH30N60BD1 CAD Model

Description

The IXSH30N60BD1 from IXYS is a high-performance IGBT (Insulated Gate Bipolar Transistor) that provides high-speed switching and low conduction losses.

  • It: is designed to provide high efficiency and reliability in a range of applications, including motor control, power supplies, and inverters.
  • The IXSH30N60BD1: is a reliable and high-performance device that provides excellent performance and low power dissipation.

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