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IXSH25N120AU1

Part No IXSH25N120AU1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 50A 200W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 4V @ 15V, 25A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 9.6mJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 100ns/450ns
Testing Conditions 960V, 25A, 18 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049699-IXSH25N120AU1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH25N120AU1 CAD Model

Description

IXSH25N120AU1 is a N-Channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 200W
  • Maximum Current Collector: 50A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Collector-Emitter Saturation Voltage (Max): 4V @ 15V, 25A
  • Package: TO-247AD (IXSH) package
  • Mounting: through a hole
  • Supply and Demand: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.0360 $66.2160
13+ $9.0552 $117.7176
20+ $8.7722 $175.4440
28+ $8.4893 $237.7004
36+ $8.2063 $295.4268
48+ $7.3574 $353.1552
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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