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Same model may have multiple batches, images only for reference.
IXGH50N60C4 Real Image
Same model may have multiple batches, images only for reference.

IXGH50N60C4

Part No IXGH50N60C4
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 90A 300W TO247
Datasheet
IXGH50N60C4 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 90A
Pulsed Collector Current 220A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 36A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 950μJ (on), 840μJ (off)
Input Type Standard
Gate Charge 113nC
Turn-on and Turn-off delay time 40ns/270ns
Testing Conditions 400V, 36A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049642-IXGH50N60C4
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXGH50N60C4 CAD Model

Description

The IXYS IXGH50N60C4 is an IGBT transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 90A.

  • Transistor features: a PT IGBT type and a standard input type with a gate charge of 113nC.
  • Package: TO-247AD package
  • Mounting: easy to mount and use.
  • Maximum power dissipation: 300W
  • Pulsed collector current: 220A
  • On-state collector-emitter saturation voltage: 2.3V @ 15V and 36A
  • Total switching energy: 950μJ (on) and 840μJ (off)
  • Operating temperature range: from -55°C to 150°C.

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