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IXGH30N60C3C1

Part No IXGH30N60C3C1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 220W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 3V @ 15V, 20A
Maximum Power Dissipation 220W
Total Switching Energy(Ets) 120μJ (on), 90μJ (off)
Input Type Standard
Gate Charge 38nC
Turn-on and Turn-off delay time 17ns/42ns
Testing Conditions 300V, 20A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049601-IXGH30N60C3C1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH30N60C3C1 CAD Model

Description

The IXYS IGBT transistor is a PT type that features an input type of standard and a gate charge of 38nC.

  • It: is a single IGBT transistor that is ideal for use in Discrete Semiconductor Products such as transistors and FETs.
  • Mounting: through hole
  • Package/case: TO-247AD (IXGH)
  • Maximum current collector: 60A
  • VCEO maximum collector-emitter breakdown voltage: 600V
  • Maximum power dissipation: 220W
  • Pulsed collector current: 150A
  • Collector-emitter saturation voltage(Max): 3V @ 15V, 20A
  • Total switching energy(Ets): 120μJ (on), 90μJ (off)
  • Turn-on and turn-off delay time: 17ns/42ns
  • Testing conditions: 300V, 20A, 5 Ohm, 15V
  • Transistor: is an active product
  • Supplied by: IXYS, a renowned manufacturer of electronic components.

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