The IXGH20N60 is a high-power IGBT transistor designed for use in various applications.

• Power Rating: 150W
• Description: making it suitable for high-power circuits and devices.
• Voltage Breakdown: 600V
• Maximum Collector Current: 40A
• Description: allowing for efficient and reliable performance.
• Vce(on): 2.5V @ 15V and 20A
• Description: it offers low power dissipation and high efficiency.
• Mounting Type: Through-Hole
• Package: TO-247-3
• Description: ensuring easy installation and secure connections.
• Manufacturer: IXYS
• Description: a leading manufacturer of semiconductor products, this IGBT transistor is of high quality and reliability.
• Description: It is an ideal choice for applications requiring high power handling and efficient switching.