The IXYS MOSFET is a N-Channel transistor with a Vds - Drain-Source Breakdown Voltage of 800V and Id - Continuous Drain Current of 32A.

• Rds On (Maximum) @ Id, Vgs: 270mOhm @ 16A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
• Application: Discrete Semiconductor Products
• Power Dissipation (Maximum): 830W
• Package: TO-264-3, TO-264AA
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range - Operating: -55°C ~ 150°C
• Gate Source Voltage (Maximum): ±30V
• Input Capacitance (Ciss) (Maximum) @ Vds: 8800pF @ 25V