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IXFK32N100P

Part No IXFK32N100P
Manufacturer IXYS
Catalog FETs - Single
Description Polar Power MOSFET HiPerFET | MOSFET N-CH 1000V 32A TO-264
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 320mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 6.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 225nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 14200pF at 25V
Power Dissipation (Maximum) 960W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1191090-IXFK32N100P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK32N100P CAD Model

Description

IXYS presents the IXFK32N100P, a MOSFET transistor with an N-Channel polarity.

  • Supply and Demand Status: Limited
  • Package: TO-264-3, TO-264AA
  • Maximum Power Dissipation: 960W
  • Vds: 1000V
  • Channel Polarity: N-Channel

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $18.0110 $54.0330
7+ $14.7782 $103.4474
11+ $14.3164 $157.4804
15+ $13.8546 $207.8190
19+ $13.3928 $254.4632
25+ $12.0073 $300.1825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,219 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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