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Same model may have multiple batches, images only for reference.
IXFH14N100 Real Image
Same model may have multiple batches, images only for reference.

IXFH14N100

Part No IXFH14N100
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs | MOSFET N-CH 1000V 14A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 750mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 220nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4500pF at 25V
Power Dissipation (Maximum) 360W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD (IXFH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191048-IXFH14N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH14N100 CAD Model

Description

The IXYS IXFH14N100 is an N-Channel MOSFET.

  • Maximum Power Dissipation: 360W
  • Drain-Source Breakdown Voltage: 1000V
  • Package: TO-247-3
  • Maximum Rds On: 750mOhm @ 500mA, 10V
  • Gate Charge: 220nC @ 10V
  • Input Capacitance: 4500pF @ 25V
  • Status: Obsolete
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 30
  • MSL Level: 1 (unlimited)

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Quantity Unit Price Ext. Price
3+ $22.6832 $68.0496
7+ $18.6119 $130.2833
10+ $18.0302 $180.3020
14+ $17.4486 $244.2804
18+ $16.8671 $303.6078
23+ $15.1222 $347.8106
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