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IXDR30N120D1

Name: IXDR30N120D1
Brand: IXYS
SKU: 1351926
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXDR30N120D1
Manufacturer	IXYS
Catalog	IGBTs - Single
Description	IGBT 1200V 50A 200W ISOPLUS247 / IGBT NPT 1200 V 50 A 200 W Through Hole ISOPLUS247™
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr	IXYS
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A
Power - Max	200 W
Switching Energy	4.6mJ (on) , 3.4mJ (off)
Input Type	Standard
Gate Charge	120 nC
Test Condition	600V, 30A, 47Ohm, 15V
Reverse Recovery Time (trr)	40 ns
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	ISOPLUS247™
Base Product Number	IXDR30
Standard Package	30
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1351926-IXDR30N120D1
Ultra Librarian 3D Model	Ultra Librarian IXDR30N120D1 CAD Model

Description

The IXDR30N120D1 is a single IGBT transistor from IXYS.

Transistor Type: IGBT, Single
Power: 200W
Voltage-Collector Emitter Breakdown (Max): 1200V
Mounting Type: Through Hole
Package: TO-247-3
Gate-Source Voltage (Vgs): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Current-Collector (Ic) (Max): 50A
Collector-Emitter Saturation Voltage (Vce(on)): 2.9V @ 15V, 30A
Gate Charge: 120 nC
Reverse Recovery Time (trr): 40 ns
Switching Energy (on): 4.6mJ @ 600V, 30A, 47Ohm, 15V
Switching Energy (off): 3.4mJ @ 600V, 30A, 47Ohm, 15V

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