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IXBX75N170A

Part No IXBX75N170A
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1700V 110A 1040W PLUS247 / IGBT 1700 V 110 A 1040 W Through Hole PLUS247™-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series BIMOSFET™
Package Tube
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 110 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 42A
Power - Max 1040 W
Switching Energy 3.8mJ (off)
Input Type Standard
Gate Charge 358 nC
Td (on/off) @ 25°C 26ns/418ns
Test Condition 1360V, 42A, 1Ohm, 15V
Reverse Recovery Time (trr) 360 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package PLUS247™-3
Base Product Number IXBX75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355062-IXBX75N170A
Ultra Librarian 3D Model Ultra Librarian IXBX75N170A CAD Model

Description

The IXBX75N170A is a single IGBT transistor from IXYS.

  • Series: BIMOSFET™
  • Package/Case: TO-247-3
  • Collector Current (Max): 110 A
  • Collector-Emitter Voltage (Max): 1700 V
  • Power (Max): 1040 W
  • Mounting Type: Through Hole
  • Reverse Recovery Time: 360 ns
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $90.1301 $90.1301
2+ $87.2226 $174.4452
3+ $84.3152 $252.9456
4+ $75.5930 $302.3720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
Order Increment : 1 pcs
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Shipped from HK warehouse
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