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IXBX55N300

Name: IXBX55N300
Brand: IXYS
SKU: 846769
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXBX55N300
Manufacturer	IXYS
Catalog	IGBTs - Single
Description	IGBT 3000V 130A 625W PLUS247
Datasheet	IXBX55N300 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr	IXYS
Series	BIMOSFET™
Package	Tube
Product Status	Not For New Designs
Voltage - Collector Emitter Breakdown (Max)	3000 V
Current - Collector (Ic) (Max)	130 A
Current - Collector Pulsed (Icm)	600 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 55A
Power - Max	625 W
Input Type	Standard
Gate Charge	335 nC
Reverse Recovery Time (trr)	1.9 µs
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	PLUS247™-3
Base Product Number	IXBX55
Standard Package	30 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	846769-IXBX55N300
Ultra Librarian 3D Model	Ultra Librarian IXBX55N300 CAD Model

Description

The IXBX55N300 is a single IGBT transistor from the BIMOSFET series by IXYS.

Series: BIMOSFET
Power Rating: 625 W
Reverse Recovery Time: 1.9 µs
Collector-Emitter Breakdown Voltage: 3000 V
Maximum Collector Current: 130 A
On-State Voltage: 3.2V @ 15V, 55A
Mounting: Through-Hole
Package: TO-247-3 variant
Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$139.2857	$139.2857
2+	$134.6429	$269.2858
3+	$120.7143	$362.1429

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 31 pieces

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Shipped from	HK warehouse
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