The ISSI SRAM Asynchronous is a high-performance, low-power, and high-density memory device that offers 4Mb memory size with a 512K x 8 configuration.

• Description: It is designed for use in applications where high speed and low power consumption are essential.
• Access Time: 45ns
• Write Cycle Time: 45ns
• Memory Interface: parallel
• Supply Voltage: 2.2V to 3.6V
• Temperature Range: -40°C to 85°C
• Package: 32-TFSOP
• Description: The device is suitable for use in applications such as networking, telecommunications, and consumer electronics.