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IS42S32200B-7TL

Part No IS42S32200B-7TL
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog SD
Description SD 2Mx32 PC133
Sample
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ECAD Module
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Categories Memory
Win Source Part Number 945760-IS42S32200B-7TL
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Ultra Librarian 3D Model Ultra Librarian IS42S32200B-7TL CAD Model

Description

The IS42S32200B-7TL is a high-speed Synchronous DRAM (SDRAM) from ISSI (Integrated Silicon Solution Inc.). It is designed for applications requiring high bandwidth and low latency, such as networking equipment, graphics cards, and embedded systems. This SDRAM is organized as 32M x 32, offering a substantial memory capacity.

Applications

  • Networking equipment
  • Graphics cards
  • Embedded systems
  • Printers
  • Industrial control systems

Features

  • 32Mb x 32 organization
  • PC133 SDRAM
  • Clock frequency up to 143 MHz
  • Single 3.3V power supply
  • LVTTL compatible inputs and outputs
  • Four internal banks for concurrent operations
  • Programmable burst length (1, 2, 4, 8, full page)
  • Programmable CAS latency (2, 3)
  • Auto precharge option for each burst
  • Auto refresh and self-refresh modes

Benefits

  • High Bandwidth: Offers high data transfer rates with a clock frequency up to 143 MHz.
  • Large Capacity: Provides a substantial memory capacity of 32Mb x 32 for demanding applications.
  • Flexible Operation: Programmable burst length and CAS latency allow for optimized memory access patterns.
  • Low Power Consumption: Operates at a single 3.3V power supply, minimizing power usage.
  • Reliable Performance: Features auto refresh and self-refresh modes for data integrity.

Additional Details

The IS42S32200B-7TL is packaged in a TSOP II package. The four internal banks allow for concurrent operations, maximizing memory throughput. It supports auto and self-refresh modes for power saving during idle periods. The device is designed to meet the requirements of high-performance memory systems, providing a balance of speed, capacity, and reliability. Its wide data bus makes it appropriate for use cases where memory bandwidth is critical.

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