The IRFB4410GPBF is a 100V single N-Channel MOSFET from International Rectifier, designed for high-efficiency power conversion and switching applications. This device features a low on-resistance (RDS(on)) and gate charge (Qg), minimizing power losses and improving overall system efficiency. Its thermally enhanced package allows for improved heat dissipation, enabling higher power density applications. This MOSFET is designed for applications demanding high current and voltage capabilities.

Applications:

• Synchronous Rectification in DC-DC Converters
• Motor Control
• Uninterruptible Power Supplies (UPS)
• High-Side Load Switching
• Battery Management Systems (BMS)

Features:

• Single N-Channel MOSFET
• Low RDS(on) to reduce conduction losses
• Low gate charge (Qg) for fast switching
• Thermally enhanced package for improved heat dissipation
• Avalanche rated
• Lead-free and RoHS compliant

Benefits:

• Improved system efficiency due to low RDS(on) and Qg
• Higher power density due to compact package and enhanced thermal performance
• Reduced power losses, leading to lower operating temperatures and improved reliability
• Simplified design
• Environmentally friendly due to lead-free and RoHS compliance

Additional Details:

The IRFB4410GPBF operates with a drain-source voltage (VDS) of up to 100V and a continuous drain current (ID) of up to 48A. The static drain-source on-resistance is typically 0.011 Ohms at VGS = 10V. It is available in a TO-220AB package. The low gate charge contributes to reduced switching losses at higher frequencies. This MOSFET is suitable for applications requiring high efficiency and compact size, especially in higher voltage circuits.