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AB28F400B5B80

Part No AB28F400B5B80
Manufacturer Intel
Catalog Hard To Find
Description 5 VOLT BOOT BLOCK FLASH MEMORY
Sample
Rohs State rohs
ECAD Module
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Manufacturer Intel
Win Source Part Number 1135035-AB28F400B5B80
Manufacturer Homepage www.intel.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AB28F400B5B80 CAD Model

Description

The AB28F400B5B80 is a 4-Mbit (512 KB) Flash memory device manufactured by Intel. This device is organized as 512K x 8 bits. It is designed for a wide range of embedded applications requiring non-volatile storage and fast read access.

Applications

  • Embedded systems
  • Microcontroller program storage
  • Data logging
  • Industrial control systems
  • Networking equipment

Features

  • 4-Mbit (512 KB) storage capacity
  • Organized as 512K x 8 bits
  • Fast read access times
  • Low power consumption
  • Erase Suspend/Resume capability
  • Write Suspend/Resume capability
  • Sector Erase architecture
  • CMOS technology
  • Available in various packages

Benefits

  • Provides non-volatile storage for critical data and code
  • Enables fast boot-up times for embedded systems
  • Reduces power consumption in battery-powered applications
  • Allows flexible memory management through sector erase
  • Facilitates efficient programming and data updates
  • Enhances system reliability through robust design

Additional Details

The AB28F400B5B80 operates at 5V and offers fast read access times, typically in the range of 80ns. It supports sector erase, allowing individual sectors to be erased and reprogrammed without affecting other parts of the memory. The device also features erase suspend and resume capabilities, which enable the system to interrupt the erase operation to read data from other sectors and then resume the erase operation later. This enhances system responsiveness and efficiency. The AB28F400B5B80 is available in various packages, including PLCC and TSOP, to suit different application requirements. Its low power consumption makes it suitable for battery-powered devices and energy-efficient systems. The Flash memory is designed for high endurance, with a specified number of erase/write cycles. Proper handling and ESD protection are essential to ensure the device's long-term reliability. Data retention is typically specified for a long duration, ensuring that data is preserved even when power is removed.

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