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SPP80N06S2-05

Name: SPP80N06S2-05
Brand: Infineon Technologies
SKU: 675446
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SPP80N06S2-05
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	OptiMOS Power-Transistor \| MOSFET N-CH 55V 80A TO-220
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	55V
Id - Continuous Drain Current	80A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	5.1mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	170nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	6790pF at 25V
Power Dissipation (Maximum)	300W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	PG-TO220-3-1
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	500
MSL Level	1 (Unlimited)
Win Source Part Number	1258134-SPP80N06S2-05
Manufacturer Homepage	www.infineon.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SPP80N06S2-05 CAD Model

Alternative Products

Description

The Infineon Technologies 1258134-SPP80N06S2-05 is a through-hole MOSFET transistor with N-Channel polarity.

Product: 1258134-SPP80N06S2-05
Manufacturer: Infineon Technologies
Mounting Type: Through-Hole
Channel Type: N-Channel
Drain-Source Breakdown Voltage (Vdss): 55V
Continuous Drain Current (Id): 80A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Gate Source Voltage(th): 4V @ 250μA
Gate Charge (Qg): 170nC @ 10V
Input Capacitance (Ciss): 6790pF @ 25V
Category: Discrete Semiconductor Products
Package: PG-TO220-3-1 tube

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