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SPD08N10

Part No SPD08N10
Manufacturer Infineon Technologies
Catalog OEM Parts ( S )
Description Contact for details
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 965483-SPD08N10
Categories OEM Parts( S )
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SPD08N10 CAD Model

Description

The SPD08N10 is an N-Channel Power MOSFET from Infineon Technologies, designed for various power switching applications. This device features a low on-resistance and fast switching capabilities, making it suitable for efficient power conversion and control. Its robust design ensures reliable performance in demanding environments.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor control
  • Lighting applications
  • Power inverters

Features

  • Low On-Resistance (RDS(on)): Reduces conduction losses for improved efficiency.
  • Fast Switching Speed: Minimizes switching losses in high-frequency applications.
  • Avalanche Rated: Provides ruggedness and reliability under transient conditions.
  • Logic Level Input: Suitable for direct interfacing with microcontrollers and logic circuits.
  • Pb-Free Lead Plating; RoHS Compliant: Meets environmental regulations.

Benefits

  • High Efficiency: Low on-resistance and fast switching speed minimize power losses.
  • Improved Reliability: Avalanche rating ensures robust performance under transient conditions.
  • Simplified Circuit Design: Logic-level input simplifies gate drive requirements.
  • Environmentally Friendly: RoHS compliance ensures minimal environmental impact.
  • Optimal Thermal Performance: Efficient heat dissipation enhances reliability in high-power applications.

Additional Details

The SPD08N10 is available in a through-hole package, often a TO-220. Its key electrical characteristics include a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 8A, and a typical on-resistance (RDS(on)) of 0.28 Ohms at a gate-source voltage (VGS) of 10V. The gate threshold voltage is typically between 2V and 4V. The device is designed to operate over a temperature range of -55°C to +175°C. Its dynamic dv/dt rating ensures stable operation under high voltage and current slew rates.

This MOSFET is commonly used in applications where efficient and reliable power switching is required. Its low on-resistance and fast switching speed make it an excellent choice for high-frequency DC-DC converters and motor control circuits.

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