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SKW30N60HSFKSA1

Part No SKW30N60HSFKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 41A 250W TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 41A
Pulsed Collector Current 112A
Collector-emitter saturation voltage(Max) 3.15V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 1.15mJ
Input Type Standard
Gate Charge 141nC
Turn-on and Turn-off delay time 20ns/250ns
Testing Conditions 400V, 30A, 11 Ohm, 15V
Reverse Recovery Time (trr) 125ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1096707-SKW30N60HSFKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SKW30N60HSFKSA1 CAD Model

Description

The Infineon Technologies SKW30N60HSFKSA1 is an NPT IGBT transistor designed for use in discrete semiconductor products.

  • Type: NPT IGBT
  • Application: Discrete Semiconductor Products
  • Current Collector: 41A
  • VCEO Maximum: 600V
  • Maximum Power Dissipation: 250W
  • Pulsed Collector Current: 112A
  • Collector-Emitter Saturation Voltage (Max): 3.15V @ 15V, 30A
  • Total Switching Energy (Ets): 1.15mJ
  • Turn-On/Off Delay Time: 20ns/250ns
  • Mounting: Through Hole
  • Package: PG-TO247-3
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
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Availability: 14,450 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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