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Same model may have multiple batches, images only for reference.
SKW25N120FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SKW25N120FKSA1

Part No SKW25N120FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 46A 313W TO247-3 / IGBT NPT 1200 V 46 A 313 W Through Hole PG-TO247-3-1
Datasheet
SKW25N120FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Last Time Buy
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 46 A
Current - Collector Pulsed (Icm) 84 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 25A
Power - Max 313 W
Switching Energy 3.7mJ
Input Type Standard
Gate Charge 225 nC
Td (on/off) @ 25°C 45ns/730ns
Test Condition 800V, 25A, 22Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-1
Base Product Number SKW25N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SKW25N120,SKW25N120-ND,SP000012571
Standard Package 240
Win Source Part Number 1186951-SKW25N120FKSA1
Ultra Librarian 3D Model Ultra Librarian SKW25N120FKSA1 CAD Model

Description

The Infineon Technologies SKW25N120FKSA1 is a high-performance IGBT transistor that is widely used in the semiconductor industry.

  • Type: NPT IGBT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 46 A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
  • Gate Charge: 225 nC
  • Switching Energy: 3.7mJ
  • RoHS Compliance: Non-compliant

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