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Same model may have multiple batches, images only for reference.
SIGC42T60UNX1SA1 Real Image
Same model may have multiple batches, images only for reference.

SIGC42T60UNX1SA1

Part No SIGC42T60UNX1SA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC42T60UNX1SA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 50A
Input Type Standard
Td (on/off) @ 25°C 48ns/350ns
Test Condition 400V, 50A, 6.8Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names SP000101820,448-SIGC42T60UNX1SA1
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277442-SIGC42T60UNX1SA1
Ultra Librarian 3D Model Ultra Librarian SIGC42T60UNX1SA1 CAD Model

Description

The SIGC42T60UNX1SA1 is an NPT IGBT transistor from Infineon Technologies.

  • Voltage Collector Emitter Breakdown (Max): 600 V
  • Continuous Collector Current (Ic) (Max): 50 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Package Type: Bulk
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Ideal For: Applications in power electronics, solar inverters, and welding equipment.

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