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Same model may have multiple batches, images only for reference.
SIGC18T60NCX1SA4
Same model may have multiple batches, images only for reference.

SIGC18T60NCX1SA4

Part No SIGC18T60NCX1SA4
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC18T60NCX1SA4 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Input Type Standard
Td (on/off) @ 25°C 21ns/110ns
Test Condition 300V, 20A, 13Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names 448-SIGC18T60NCX1SA4,SP000272513
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277455-SIGC18T60NCX1SA4
Ultra Librarian 3D Model Ultra Librarian SIGC18T60NCX1SA4 CAD Model

Description

The 1277455-SIGC18T60NCX1SA4 is an NPT IGBT transistor designed for high voltage, high current applications.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 20A
  • Switching Energy: Not specified
  • Turn-On Time: 21ns
  • Turn-Off Time: 110ns
  • Designed For: Use in standard input circuits.
  • Package: Die
  • Temperature Range: -55°C to 150°C

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