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Same model may have multiple batches, images only for reference.
SGW25N120 Real Image
Same model may have multiple batches, images only for reference.

SGW25N120

Part No SGW25N120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 46A 313W TO247-3
Datasheet
SGW25N120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 46A
Pulsed Collector Current 84A
Collector-emitter saturation voltage(Max) 3.6V @ 15V, 25A
Maximum Power Dissipation 313W
Total Switching Energy(Ets) 3.7mJ
Input Type Standard
Gate Charge 225nC
Turn-on and Turn-off delay time 45ns/730ns
Testing Conditions 800V, 25A, 22 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1095632-SGW25N120
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SGW25N120 CAD Model

Description

The Infineon Technologies SGW25N120 is an NPT IGBT with a maximum collector-emitter breakdown voltage of 1200V.

  • Type: NPT IGBT
  • Collector-Emitter Breakdown Voltage (Max): 1200V
  • Power Dissipation (Max): 313W
  • Current Collector (Max): 46A
  • Package: PG-TO247-3
  • Mounting: Through hole
  • Gate Charge: 225nC
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Not for new designs
  • Popularity: Medium
  • Supply and Demand: Limited

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85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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