The SGW20N60 is a single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.

• It is designed for high power applications and operates with a maximum voltage breakdown of 600V.
• The SGW20N60 has a maximum power rating of 179W and a maximum collector current of 40A.
• It features a low Vce(on) of 2.4V @ a gate-emitter voltage of 15V and a collector current of 20A.
• This IGBT is suitable for applications that require efficient switching and high power handling.
• It comes in a TO-247-3 package and is through-hole mountable.
• The SGW20N60 has a temperature range of -55°C to 150°C, making it suitable for operation in extreme conditions.
• This product is currently active and available in the market.