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SGD02N120BUMA1 Real Image1 SGD02N120BUMA1 Real Image2
Same model may have multiple batches, images only for reference.
SGD02N120BUMA1 Real Image1 SGD02N120BUMA1 Real Image2
SGD02N120BUMA1 Real Image1 SGD02N120BUMA1 Real Image2
Same model may have multiple batches, images only for reference.

SGD02N120BUMA1

Part No SGD02N120BUMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 6.2A 62W TO252-3
Datasheet
SGD02N120BUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 6.2A
Pulsed Collector Current 9.6A
Collector-emitter saturation voltage(Max) 3.6V @ 15V, 2A
Maximum Power Dissipation 62W
Total Switching Energy(Ets) 220μJ
Input Type Standard
Gate Charge 11nC
Turn-on and Turn-off delay time 23ns/260ns
Testing Conditions 800V, 2A, 91 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 128914-SGD02N120BUMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian SGD02N120BUMA1 CAD Model

Description

The Infineon Technologies 128914-SGD02N120BUMA1 is an NPT IGBT type device with a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 6.2A.

  • Collector-Emitter Saturation Voltage: 3.6V @ 15V, 2A
  • Total Switching Energy: 220μJ
  • Turn-On Delay Time: 23ns
  • Turn-Off Delay Time: 260ns
  • Package: PG-TO252-3
  • Operating Voltage: 800V, 2A, 91 Ohm, and 15V
  • Supply and Demand Status: balanced
  • Quantity Per Package: 2,500

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3+ $18.9180 $56.7540
7+ $15.5224 $108.6568
10+ $15.0374 $150.3740
14+ $14.5523 $203.7322
18+ $14.0672 $253.2096
24+ $12.6120 $302.6880
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Availability: 14,520 pieces
MOQ: 3 pcs
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