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Same model may have multiple batches, images only for reference.
SGB20N60 Infineon Technologies
Same model may have multiple batches, images only for reference.

SGB20N60

Part No SGB20N60
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 40A 179W TO263-3
Datasheet
SGB20N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 20A
Maximum Power Dissipation 179W
Total Switching Energy(Ets) 440μJ (on), 330μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 36ns/225ns
Testing Conditions 400V, 20A, 16 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Win Source Part Number 064352-SGB20N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SGB20N60 CAD Model

Description

The Infineon Technologies' product with the Win Source Part Number 064352-SGB20N60 is a high-power NPT IGBT designed for high-performance electronic devices.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PG-TO263-3
  • Maximum Collector-Emitter Breakdown Voltage: 600V

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