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Same model may have multiple batches, images only for reference.
SDT10S30 Real Image
Same model may have multiple batches, images only for reference.

SDT10S30

Part No SDT10S30
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description Silicon Carbide Schottky Diode
Datasheet
SDT10S30 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series thinQ!
Packaging Tube
Part Status Obsolete(EOL)
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 300V
Current - Average Rectified (Io) 10A (DC)
Voltage - Forward (Vf) (Maximum) @ If 1.7V @ 10A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 200μA @ 300V
Capacitance @ Vr, F 600pF @ 0V, 1MHz
Mounting Style Through Hole
Package TO-220-2
Manufacturer Package PG-TO220-2
Operating Temperature - Junction -55°C ~ 175°C
Win Source Part Number 1247505-SDT10S30
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name SDT10S30
Introduction Date December 04, 2001
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SDT10S30 CAD Model

Description

The SDT10S30 is a silicon carbide Schottky diode from Infineon Technologies, designed for use in discrete semiconductor products.

  • Voltage - DC reverse (Vr): 300V
  • Current - average rectified (Io): 10A (DC)
  • Voltage - forward (Vf) (maximum) @ If: 1.7V @ 10A
  • Package: TO-220-2
  • Operating temperature - junction: -55°C ~ 175°C
  • Supply and demand status: limited

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