The IRLM2803TRPBF is a 30V Single N-Channel HEXFET® Power MOSFET from Infineon Technologies. It is designed for low voltage, high current applications, offering low on-resistance and fast switching speeds. This MOSFET is well-suited for load switching, power management, and DC-DC conversion in portable devices and other space-constrained applications.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Management Systems
• Motor Control

Features

• N-Channel MOSFET
• Low On-Resistance (RDS(on))
• Logic-Level Gate Drive
• Fast Switching Speed
• Surface Mount Package (Micro8™)
• Lead-Free

Benefits

• High Efficiency: The low on-resistance minimizes power losses, resulting in higher efficiency in power conversion applications.
• Simplified Gate Drive: Logic-level gate drive simplifies the design of gate drive circuits, reducing component count and cost.
• Fast Switching: Reduces switching losses and improves performance in high-frequency applications.
• Compact Size: The Micro8™ package allows for dense board layouts, making it suitable for portable and space-constrained applications.
• Environmentally Friendly: Lead-free construction complies with environmental regulations.

Technical Specifications

The IRLM2803TRPBF has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 4.2A. The on-resistance (RDS(on)) is typically 0.045 Ohms at VGS = 4.5V and 0.065 Ohms at VGS = 2.5V. The gate threshold voltage (VGS(th)) is between 1V and 2V. The device is available in a Micro8™ package.