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Same model may have multiple batches, images only for reference.
IRL3103L Real Image
Same model may have multiple batches, images only for reference.

IRL3103L

Part No IRL3103L
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) | MOSFET N-CH 30V 64A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 64A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12mOhm at 34A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 4.5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1650pF at 25V
Power Dissipation (Maximum) 94W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188469-IRL3103L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3103L CAD Model

Description

The Infineon Technologies IRL3103L is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 64A.

  • Drain-Source Breakdown Voltage: 30V.
  • Continuous Drain Current: 64A.
  • Maximum Power Dissipation: 94W.
  • Maximum Gate-Source Voltage: ±16V.
  • Gate-Source Voltage Threshold: 1V @ 250μA.
  • Input Capacitance: 1650pF @ 25V.
  • Mounting Type: Through-hole.
  • Package: TO-262-3 long leads, I2Pak, TO-262AA.
  • Drive Voltage (Max Rds On): 4.5V.
  • Drive Voltage (Min Rds On): 10V.
  • Status: Obsolete, limited supply and demand.

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