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IRGR3B60KD2TRLP

Name: IRGR3B60KD2TRLP
Brand: Infineon Technologies
SKU: 462553
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRGR3B60KD2TRLP
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 7.8A 52W DPAK
Datasheet	IRGR3B60KD2TRLP Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
IGBT Type	NPT
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	7.8A
Pulsed Collector Current	15.6A
Collector-emitter saturation voltage(Max)	2.4V @ 15V, 3A
Maximum Power Dissipation	52W
Total Switching Energy(Ets)	62μJ (on), 39μJ (off)
Input Type	Standard
Gate Charge	13nC
Turn-on and Turn-off delay time	18ns/110ns
Testing Conditions	400V, 3A, 100 Ohm, 15V
Reverse Recovery Time (trr)	77ns
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	D-Pak
Win Source Part Number	1047373-IRGR3B60KD2TRLP
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRGR3B60KD2TRLP CAD Model

Description

The Infineon Technologies 1047373-IRGR3B60KD2TRLP is a NPT IGBT transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 7.8A.

Manufacturer: Infineon Technologies
Type: NPT IGBT Transistor
Collector-Emitter Breakdown Voltage: 600V
Maximum Collector Current: 7.8A
Gate Charge: 13nC
Reverse Recovery Time: 77ns
Case: D-Pak
Maximum Power Dissipation: 52W
Pulsed Collector Current: 15.6A
Collector-Emitter Saturation Voltage: 2.4V @ 15V and 3A
Turn-On Delay Time: 18ns
Turn-Off Delay Time: 110ns
Total Switching Energy (On): 62μJ
Total Switching Energy (Off): 39μJ

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