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Same model may have multiple batches, images only for reference.
IRGPC50FD2 Real Image
Same model may have multiple batches, images only for reference.

IRGPC50FD2

Part No IRGPC50FD2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT W/DIODE 600V 70A TO-247AC
Datasheet
IRGPC50FD2 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 70A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 39A
Maximum Power Dissipation 200W
Input Type Standard
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 1047367-IRGPC50FD2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGPC50FD2 CAD Model

Description

The Infineon Technologies 1047367-IRGPC50FD2 is a through-hole IGBT transistor designed for use in discrete semiconductor products.

  • Collector Current (Max): 70A
  • Collector-Emitter Breakdown Voltage (Max): 600V
  • Power Dissipation (Max): 200W
  • Collector-Emitter Saturation Voltage: 1.7V @ 15V and 39A
  • Supply and demand status: Balanced
  • Status: Obsolete (EOL)

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