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IRGP50B60PD1PBF

Part No IRGP50B60PD1PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 75A 390W TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.85V @ 15V, 50A
Maximum Power Dissipation 390W
Total Switching Energy(Ets) 255μJ (on), 375μJ (off)
Input Type Standard
Gate Charge 205nC
Turn-on and Turn-off delay time 30ns/130ns
Testing Conditions 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 016699-IRGP50B60PD1PBF
Family Name IRGP50B60PD1
Introduction Date June 02, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP50B60PD1PBF CAD Model

Description

The Infineon Technologies IRGP50B60PD1PBF is an NPT IGBT transistor with a maximum current collector of 75A and a VCEO maximum collector-emitter breakdown voltage of 600V. It has a gate charge of 205nC and is packaged in a TO-247AC case.

  • Reverse Recovery Time: 42ns
  • Application: suitable for use in applications such as power supplies, inverters, and motor control circuits.
  • Popularity: high
  • Alternatives: AUIRGP50B60PD1, STGW45HF60WDI, and STGW45HF60WD.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $128.5714 $128.5714
2+ $124.2857 $248.5714
3+ $111.4286 $334.2858
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Availability: 465 pieces
Order Increment : 1 pcs
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