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Same model may have multiple batches, images only for reference.
IRGP30B60KD-EP Real Image
Same model may have multiple batches, images only for reference.

IRGP30B60KD-EP

Part No IRGP30B60KD-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 60A 304W TO247AD
Datasheet
IRGP30B60KD-EP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.35V @ 15V, 30A
Maximum Power Dissipation 304W
Total Switching Energy(Ets) 350μJ (on), 825μJ (off)
Input Type Standard
Gate Charge 102nC
Turn-on and Turn-off delay time 46ns/185ns
Testing Conditions 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 125ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 069673-IRGP30B60KD-EP
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Communications & Networking, Power Management, Consumer Electronics, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian IRGP30B60KD-EP CAD Model

Description

The Infineon Technologies 069673-IRGP30B60KD-EP is a high-performance NPT IGBT transistor designed to operate in through-hole mounting. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 60A.

  • Gate Charge: 102nC
  • Reverse Recovery Time: 125ns
  • Maximum Power Dissipation: 304W
  • Collector-Emitter Saturation Voltage: 2.35V @ 15V, 30A
  • Turn-on Delay Time: 46ns
  • Turn-off Delay Time: 185ns
  • Application: widely used in communications and networking, power management, consumer electronics, and motor drive and control.

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