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Same model may have multiple batches, images only for reference.
IRG8P40N120KDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG8P40N120KDPBF

Part No IRG8P40N120KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 1200V 60A 305W TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 75A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 25A
Maximum Power 305W
Switching Energy 1.6mJ (on), 1.8mJ (off)
Input Type Standard
Gate Charge 240nC
Td (on/off) at 25°C 40ns/245ns
Test Condition 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) 80ns
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188333-IRG8P40N120KDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG8P40N120KDPBF CAD Model

Description

The Infineon Technologies IRG8P40N120KDPBF is a high-performance IGBT transistor designed for use in a wide range of electronic circuits. This IGBT transistor is designed to deliver high power and efficiency, making it ideal for use in high-power applications.

  • Voltage Rating: 1200 volts
  • Current Rating: 60 amps
  • Features: low on-resistance and a high thermal performance
  • Supply and demand status: limited

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84+ $4.1719 $350.4396
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