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Same model may have multiple batches, images only for reference.
IRG7PH37K10DPBF Real Image
Same model may have multiple batches, images only for reference.

IRG7PH37K10DPBF

Part No IRG7PH37K10DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 1200V 45A 216W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 45A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.4V at 15V, 15A
Maximum Power 216W
Switching Energy 1mJ (on), 600μJ (off)
Input Type Standard
Gate Charge 135nC
Td (on/off) at 25°C 50ns/240ns
Test Condition 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr) 120ns
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188326-IRG7PH37K10DPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG7PH37K10DPBF CAD Model

Description

The Infineon Technologies IRG7PH37K10DPBF is an obsolete product that belongs to the discrete semiconductor products category.

  • Category: Discrete Semiconductor Products
  • Type: IGBT
  • Voltage-Collector Emitter Breakdown: 1200V
  • Maximum Current: 45A
  • Maximum Power: 216W
  • Vce(on): 2.4V @ 15V, 15A
  • Reverse Recovery Time: 120ns
  • Gate Charge: 135nC
  • Package: TO-247AC
  • Popularity: Medium

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