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IRG7PH35UD-EP

Part No IRG7PH35UD-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 1200V 50A COPAK247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 50A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 20A
Maximum Power 180W
Switching Energy 1.06mJ (on), 620μJ (off)
Input Type Standard
Gate Charge 85nC
Td (on/off) at 25°C 30ns/160ns
Test Condition 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 105ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Family Part Number IRG7PH35
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1188323-IRG7PH35UD-EP
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG7PH35UD-EP CAD Model

Description

The IRG7PH35UD-EP is an IGBT transistor designed for use in high-power switching applications manufactured by Infineon Technologies.

  • Maximum Collector Current: 50 A
  • Breakdown Voltage: 1200 V
  • Technology: trench IGBT
  • Package: TO-247AD
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9333 $57.9990
65+ $1.5863 $103.1095
100+ $1.5367 $153.6700
135+ $1.4871 $200.7585
175+ $1.4376 $251.5800
235+ $1.2889 $302.8915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,520 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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