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Same model may have multiple batches, images only for reference.
IRG4RC10SD Real Image
Same model may have multiple batches, images only for reference.

IRG4RC10SD

Part No IRG4RC10SD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | IGBT 600V 14A 38W DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 14A
Current - Collector Pulsed (Icm) 18A
Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 8A
Maximum Power 38W
Switching Energy 310μJ (on), 3.28mJ (off)
Input Type Standard
Gate Charge 15nC
Td (on/off) at 25°C 76ns/815ns
Test Condition 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr) 28ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188318-IRG4RC10SD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4RC10SD CAD Model

Description

The Infineon Technologies IRG4RC10SD is an obsolete Discrete Semiconductor Product that is no longer recommended for new designs.

  • IGBT Transistor Maximum Current - Collector (Ic): 14A
  • Maximum Voltage - Collector Emitter Breakdown: 600V
  • Reverse Recovery Time (trr): 28ns
  • Gate Charge: 15nC
  • Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Power: 38W
  • ECCN: EAR99 compliant
  • Manufacturer Pack Quantity: 75
  • Popularity: Medium popularity
  • Supply and Demand Status: Balanced

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