The IRG4RC10K is a discrete Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It is designed for applications requiring high-speed switching and efficient power handling. This IGBT is suitable for use in a variety of power conversion and motor control applications.

Applications

• Induction heating
• Welding equipment
• Uninterruptible Power Supplies (UPS)
• Power factor correction (PFC) circuits
• General inverter applications

Features

• High speed switching
• Short circuit rated
• Ultra soft fast recovery co-packed diode
• Low VCE(on) voltage
• Positive temperature coefficient for easy paralleling

Benefits

• Improved efficiency in switching applications
• Robust performance under short circuit conditions
• Reduced EMI due to soft recovery diode
• Lower conduction losses
• Simplified design for parallel operation

Technical Specifications

The IRG4RC10K has a collector-emitter voltage (Vce) rating of 600V and a collector current (Ic) rating of 20A at Tc=100°C. The typical VCE(on) is 1.65V at Ic = 10A. The turn-on and turn-off times are optimized for high-speed switching. It is packaged in a TO-252AA package. This IGBT also includes an integrated diode, further simplifying circuit design and improving overall performance. Gate threshold voltage typically ranges from 3V to 5V.