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Same model may have multiple batches, images only for reference.
IRG4PH20KD Real Image
Same model may have multiple batches, images only for reference.

IRG4PH20KD

Part No IRG4PH20KD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) | IGBT 1200V 11A 60W TO247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 11A
Current - Collector Pulsed (Icm) 22A
Vce(on) (Maximum) at Vge, Ic 4.3V at 15V, 5A
Maximum Power 60W
Switching Energy 620μJ (on), 300μJ (off)
Input Type Standard
Gate Charge 28nC
Td (on/off) at 25°C 50ns/100ns
Test Condition 800V, 5A, 50Ohm, 15V
Reverse Recovery Time (trr) 51ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188290-IRG4PH20KD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4PH20KD CAD Model

Description

The IGBT from Infineon Technologies is a discrete semiconductor product that is ideal for use in various electronic applications.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 11A
  • Maximum Power Dissipation: 60W
  • Collector-Emitter Saturation Voltage: 4.3V @ 15V, 5A
  • Gate Charge: 28nC
  • Switching Energy (On): 620μJ
  • Switching Energy (Off): 300μJ
  • Package: TO-247AC
  • Drive Voltage: 15V
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 25

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