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IRG4PC50KDPBF

Part No IRG4PC50KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 52A 200000mW 3-Pin(3+Tab) TO-247AC Tube / IGBT 600V 52A 200W TO247AC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 52A
Pulsed Collector Current 104A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 30A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 1.61mJ (on), 840μJ (off)
Input Type Standard
Gate Charge 200nC
Turn-on and Turn-off delay time 63ns/150ns
Testing Conditions 480V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 1047314-IRG4PC50KDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRG4PC50KD
Introduction Date May 04, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRG4PC50KDPBF CAD Model

Description

The Infineon Technologies IRG4PC50KDPBF is a through-hole IGBT transistor with a VCEO maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 52A.

  • Collector-Emitter Breakdown Voltage (VCEO): 600V
  • Maximum Collector Current: 52A
  • Maximum Power Dissipation: 200W
  • Collector-Emitter Saturation Voltage (Max): 2.2V @ 15V, 30A
  • Turn-On Delay Time: 63ns
  • Turn-Off Delay Time: 150ns
  • Package: TO-247AC

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $80.0000 $80.0000
2+ $77.5000 $155.0000
3+ $75.0000 $225.0000
4+ $72.5000 $290.0000
5+ $65.0000 $325.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,350 pieces
Order Increment : 1 pcs
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