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IRG4PC50KD

Name: IRG4PC50KD
Brand: Infineon Technologies
SKU: 161194
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRG4PC50KD
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 52A 200W TO247AC
Datasheet	IRG4PC50KD Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Bulk
Status	Active
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	52A
Pulsed Collector Current	104A
Collector-emitter saturation voltage(Max)	2.2V @ 15V, 30A
Maximum Power Dissipation	200W
Total Switching Energy(Ets)	1.61mJ (on), 840μJ (off)
Input Type	Standard
Gate Charge	200nC
Turn-on and Turn-off delay time	63ns/150ns
Testing Conditions	480V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr)	50ns
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-247AC
Win Source Part Number	205430-IRG4PC50KD
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRG4PC50KD CAD Model

Description

The Infineon Technologies IRG4PC50KD is a TO-247AC packaged IGBT transistor with a VCEO maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 52A.

Maximum Power Dissipation: 200W
Gate Charge: 200nC
Reverse Recovery Time (trr): 50ns
Input Type: Standard
Operating Temperature: -55°C to 150°C (TJ)
Collector-Emitter Saturation Voltage (Max): 2.2V @ 15V, 30A
Total Switching Energy (Ets): 1.61mJ (on), 840μJ (off)
Turn-On and Turn-Off Delay Time: 63ns/150ns
Supply and Demand Status: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$80.0000	$80.0000
2+	$77.5000	$155.0000
3+	$75.0000	$225.0000
4+	$72.5000	$290.0000
5+	$65.0000	$325.0000

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

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