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Same model may have multiple batches, images only for reference.
IRG4PC30KDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC30KDPBF

Part No IRG4PC30KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 28A 100W TO247AC / Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-247AC Tube
Datasheet
IRG4PC30KDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 28A
Current - Collector Pulsed (Icm) 58A
Vce(on) (Maximum) @ Vge, Ic 2.7V @ 15V, 16A
Power - Max 100W
Switching Energy 600μJ (on), 580μJ (off)
Input Type Standard
Gate Charge 67nC
Td (on/off) @ 25°C 60ns/160ns
Test Condition 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AC
Win Source Part Number 777088-IRG4PC30KDPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRG4PC30KD
Introduction Date July 30, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2021
Ultra Librarian 3D Model Ultra Librarian IRG4PC30KDPBF CAD Model

Description

The Infineon Technologies IRG4PC30KDPBF is a power IGBT transistor with a maximum power of 100W.

  • Maximum Power: 100W
  • Reverse Recovery Time: 42ns
  • Current Collector Pulsed: 58A
  • Switching Energy: 600μJ (on) and 580μJ (off)
  • Gate Charge: 67nC
  • Package: TO-247-3
  • Mounting: Through-hole
  • Temperature Range: -55°C to 150°C
  • Halogen-Free: Yes
  • Country of Origin: Mexico
  • Estimated EOL Date: 2021

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