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Same model may have multiple batches, images only for reference.
IRG4BC20FPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC20FPBF

Part No IRG4BC20FPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 16A 60W TO220AB
Datasheet
IRG4BC20FPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 16A
Pulsed Collector Current 64A
Collector-emitter saturation voltage(Max) 2V @ 15V, 9A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 70μJ (on), 600μJ (off)
Input Type Standard
Gate Charge 27nC
Turn-on and Turn-off delay time 24ns/190ns
Testing Conditions 480V, 9A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 1047279-IRG4BC20FPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRG4BC20FPBF CAD Model

Description

The Infineon Technologies IGBT with Win Source Part Number 1047279-IRG4BC20FPBF is a high-performance insulated gate bipolar transistor.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 16A
  • Maximum Power Dissipation: 60W
  • Package: TO-220AB package
  • Gate Charge: 27nC
  • Collector-Emitter Saturation Voltage: 2V @ 15V, 9A
  • Turn-On Delay Time: 24ns
  • Turn-Off Delay Time: 190ns
  • Total Switching Energy (on): 70μJ
  • Total Switching Energy (off): 600μJ

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