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Same model may have multiple batches, images only for reference.
IRFU4620PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU4620PBF

Part No IRFU4620PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 200V 24A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 78mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1710pF at 50V
Power Dissipation (Maximum) 144W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188108-IRFU4620PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU4620PBF CAD Model

Description

The Infineon Technologies IRFU4620PBF MOSFET is a high-performance N-Channel transistor designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Type: N-Channel MOSFET
  • Mounting: Through-Hole
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 24A
  • Maximum Power Dissipation: 144W
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1710pF @ 50V
  • Gate Charge: 38nC @ 10V
  • Applications: Power supplies, motor control, and lighting

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