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Same model may have multiple batches, images only for reference.
IRFU4105Z Real Image
Same model may have multiple batches, images only for reference.

IRFU4105Z

Part No IRFU4105Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) | MOSFET N-CH 55V 30A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 24.5mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 27nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 740pF at 25V
Power Dissipation (Maximum) 48W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188105-IRFU4105Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU4105Z CAD Model

Description

The Infineon Technologies IRFU4105Z is an N-channel MOSFET with a TO-251-3 short leads, IPak, TO-251AA package.

  • Power Dissipation: 48W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A
  • Maximum Rds On: 24.5mOhm @ 18A and 10V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 27nC @ 10V
  • Input Capacitance (Ciss): 740pF @ 25V

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