The Infineon Technologies IRFS7530-7P MOSFET is a high-performance N-channel transistor designed for use in discrete semiconductor products. This device features a drain-source breakdown voltage of 60V, with a continuous drain current of 240A @ 25°C.

• The IRFS7530-7P is packaged in a D2PAK with 7 leads, and has a power dissipation of 375W.
• The device has a drive voltage of 6V and 10V, and a gate-source voltage of ±20V.
• The gate-source threshold voltage is 3.7V @ 250μA, and the gate charge is 354nC @ 10V.
• The input capacitance is 12960pF @ 25V, and the device operates in a temperature range of -55°C to 175°C.
• The Infineon Technologies IRFS7530-7P MOSFET is a commonly used part with high popularity in the market.