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IRFP3415PBF

Part No IRFP3415PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 150V 43A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 43A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 42mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247AC
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1187786-IRFP3415PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP3415PBF CAD Model

Description

The Infineon Technologies IRFP3415PBF is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 150V, continuous drain current of 43A, and maximum power dissipation of 200W.

  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Input Capacitance: 2400pF @ 25V
  • Mounting Style: through-hole
  • Package: TO-247AC
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 175°C
  • Gate Charge: 200nC @ 10V
  • Pack Quantity: 400
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7539 $52.6170
70+ $1.4391 $100.7370
110+ $1.3941 $153.3510
150+ $1.3492 $202.3800
195+ $1.3042 $254.3190
260+ $1.1693 $304.0180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,529 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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