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Same model may have multiple batches, images only for reference.
IRFP1405 Real Image
Same model may have multiple batches, images only for reference.

IRFP1405

Part No IRFP1405
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 55V 95A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 95A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5.3mOhm at 95A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5600pF at 25V
Power Dissipation (Maximum) 310W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247AC
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187757-IRFP1405
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP1405 CAD Model

Description

The Infineon Technologies IRFP1405 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 55V, continuous drain current of 95A, and maximum power dissipation of 310W.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 95A
  • Maximum Power Dissipation: 310W
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Input Capacitance: 5600pF @ 25V
  • Mounting Style: Through-Hole
  • Package: TO-247AC
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 175°C
  • Gate Charge: 180nC @ 10V
  • Pack Quantity: 25
  • Popularity: Medium

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