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IRFI4212H-117PXKMA1

Part No IRFI4212H-117PXKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 100V 11A TO220-5 / Mosfet Array 2 N-Channel (Dual) 100V 11A (Tc) 18W (Tc) Through Hole TO-220-5 Full-Pak
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Package Tube
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Rds On (Max) @ Id, Vgs 72.5mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 50V
Power - Max 18W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-5 Full Pack, Formed Leads
Supplier Device Package TO-220-5 Full-Pak
Base Product Number IRFI4212
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IRFI4212H-117PXKMA1,SP005547285
Standard Package 50
Win Source Part Number 1023788-IRFI4212H-117PXKMA1
Ultra Librarian 3D Model Ultra Librarian IRFI4212H-117PXKMA1 CAD Model

Description

This electronic component is a dual N-Channel transistor manufactured by Infineon Technologies.

  • Win Source Part Number: 1023788-IRFI4212H-117PXKMA1
  • Package: Tube
  • Standard Package: 50
  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2717 $50.8680
100+ $1.0435 $104.3500
150+ $1.0109 $151.6350
205+ $0.9783 $200.5515
265+ $0.9457 $250.6105
355+ $0.8479 $301.0045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,960 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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